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  • Infineon Technologies IRLR2905TRPBF MOSFET N-CH 55V 42A DPAK

    Infineon Technologies IRLR2905TRPBF MOSFET N-CH 55V 42A DPAK

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Description

Infineon Technologies IRLR2905TRPBF MOSFET N-CH 55V 42A DPAK

Infineon Technologies IRLR2905TRPBF MOSFET N-CH 55V 42A DPAK
NEW & Original 
Warranty 180days




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Ms. Yuki Quan
Hi-tech (HK) Electronics Co.,Ltd
Tel:+86-0755-82497980
Skype: yukiquansky
Cell/whatsapp:+8618302066449
Email: yuki@componentsindustry.com
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Manufacturer

Infineon Technologies

PartSearchCore.DksusService3.PidVid
Manufacturer Part Number

IRLR2905TRPBF

IRLR2905TRPBF
Description MOSFET N-CH 55V 42A DPAK
MOSFET N-CH 55V 42A DPAK
Detailed Description

N-Channel 55V 42A (Tc) 110W (Tc) Surface Mount D-Pak

N-Channel 55V 42A (Tc) 110W (Tc) Surface Mount D-Pak
Documents & Media
Datasheets IRLR/U2905PbF
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PCN Assembly/Origin Warehouse Transfer 29/Jul/2015
PCN Packaging Package Drawing Update 19/Aug/2015
Packing Material Update 16/Sep/2016
Barcode Label Update 24/Feb/2017
Mult Dev Lot No Format Chg 6/Apr/2018
Simulation Models IRLR2905TRPBF Spice Model
IRLR2905 Spice Model
IRLR2905PBF Saber Model
Online Catalog N-Channel MOSFET (Metal Oxide) 
Product Attributes Select All
Categories Discrete Semiconductor Products
Transistors - FETs, MOSFETs - Single
Manufacturer Infineon Technologies
Series HEXFET®
Packaging ? Tape & Reel (TR) ?
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55V
Current - Continuous Drain (Id) @ 25°C 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 27 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 48nC @ 5V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 25V
FET Feature -
Power Dissipation (Max) 110W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63

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